Invention Grant
- Patent Title: Optoelectronic element
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Application No.: US15973091Application Date: 2018-05-07
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Publication No.: US10686106B2Publication Date: 2020-06-16
- Inventor: Cheng-Nan Han , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching-San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu
- Applicant: Epistar Corporation
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Ditthavong & Steiner P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@545c54fd com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6bd756cf
- Main IPC: H01L33/58
- IPC: H01L33/58 ; H01L33/38 ; H01L33/46 ; H01L33/44 ; H01L33/20 ; H01L23/00 ; H01L33/48

Abstract:
The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.
Public/Granted literature
- US20180254391A1 OPTOELECTRONIC ELEMENT Public/Granted day:2018-09-06
Information query
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