Invention Grant
- Patent Title: Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM
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Application No.: US15999229Application Date: 2018-08-16
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Publication No.: US10686123B2Publication Date: 2020-06-16
- Inventor: Guohan Hu , Daniel Worledge
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/12 ; G11C11/16 ; H01L27/22 ; H01L43/10

Abstract:
A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the second magnetic free layer has higher magnetic damping (greater than 0.01) as compared with the first magnetic free layer. Such a multilayered magnetic free layer structure substantially reduces the switching current needed to reorient the magnetization of the magnetic free layers. The higher magnetic damping value of the second magnetic free layer as compared to the first magnetic free layer improves the switching speed of the magnetic free layers and thus reduces, and even eliminates, write errors.
Public/Granted literature
- US20200058845A1 Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM Public/Granted day:2020-02-20
Information query
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