A semiconductor light emitting element has a laminated structure formed by laminating a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. The semiconductor light emitting element satisfies ΔI2>ΔI1, where ΔI1 is an operating current range when the temperature of the active layer is T1, and ΔI2 is the operating current range when the temperature of the active layer is T2 (where T2>T1). The semiconductor light emitting element satisfies P2>P1, where P1 is a maximum optical output emitted when the temperature of the active layer is T1, and P2 is the maximum optical output emitted when the temperature of the active layer is T2 (where T2>T1).