Invention Grant
- Patent Title: Method of manufacturing semiconductor laser device
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Application No.: US16379680Application Date: 2019-04-09
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Publication No.: US10686298B2Publication Date: 2020-06-16
- Inventor: Daiji Kasahara
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Foley & Lardner LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@64172f02
- Main IPC: H01S5/343
- IPC: H01S5/343 ; H01S5/34 ; H01S5/20
Abstract:
A method of manufacturing a semiconductor laser device includes: forming an n-type nitride semiconductor layer; forming a first layer comprising InaGa1-aN (0
Public/Granted literature
- US20190237938A1 METHOD OF MANUFACTURING SEMICONDUCTOR LASER DEVICE Public/Granted day:2019-08-01
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