Invention Grant
- Patent Title: Low noise amplifier circuit with multiple-input multiple-output (MIMO) structure
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Application No.: US16166295Application Date: 2018-10-22
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Publication No.: US10686413B2Publication Date: 2020-06-16
- Inventor: Hyun Hwan Yoo , Jong Mo Lim , Yoo Sam Na , Hyun Jin Yoo , Hyung Jun Cho , Yoo Hwan Kim
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6169e62
- Main IPC: H03F1/32
- IPC: H03F1/32 ; H03F3/195 ; H04B7/0413

Abstract:
A low noise amplifier circuit includes a first low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among first and second band signals; a second low noise amplifier including a common gate structure cascoded with a parallel common source structure to selectively amplify a band signal among third and fourth band signals; an output DPDT circuit including a first input terminal connected to the first low noise amplifier, a second input terminal connected to the second low noise amplifier, and a first output terminal and a second output terminal for selectively outputting signals input through the first input terminal and the second input terminal; and a control circuit performing an amplification control and a switching control for the first and second low noise amplifiers and the output DPDT circuit in response to a predetermined communications scheme.
Public/Granted literature
- US20190334488A1 LOW NOISE AMPLIFIER CIRCUIT WITH MULTIPLE-INPUT MULTIPLE-OUTPUT (MIMO) STRUCTURE Public/Granted day:2019-10-31
Information query
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