Invention Grant
- Patent Title: Substrate processing apparatus, and method for manufacturing semiconductor device
-
Application No.: US15910888Application Date: 2018-03-02
-
Publication No.: US10689758B2Publication Date: 2020-06-23
- Inventor: Hidenari Yoshida , Tomoshi Taniyama , Takayuki Nakada
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Main IPC: C23C16/40
- IPC: C23C16/40 ; C23C16/455 ; C23C16/34

Abstract:
Provided is a technique capable of purging a adiabatic region without adversely affecting a processing region. A process chamber including a processing region for processing a substrate and a adiabatic region located below the processing region is included inside. A first exhaust portion for discharging an atmosphere of the processing region, and a second exhaust portion for discharging an atmosphere of the adiabatic region, formed at a position overlapping with the adiabatic region in a height direction, are included.
Public/Granted literature
- US20180187307A1 SUBSTRATE PROCESSING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2018-07-05
Information query
IPC分类: