A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a multi-plane heater such as a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate. The multi-plane heater includes at least one pair of vertically offset heating elements connected in series or parallel to control heating output in a heating zone on the substrate support. The thermal control elements can be powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones.