Invention Grant
- Patent Title: Optical element and optical system for EUV lithography, and method for treating such an optical element
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Application No.: US14854784Application Date: 2015-09-15
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Publication No.: US10690812B2Publication Date: 2020-06-23
- Inventor: Hermanus Hendricus Petrus Theodorus Bekman , Dirk Heinrich Ehm , Jeroen Huijbregtse , Arnoldus Jan Storm , Tina Graber , Irene Ament , Dries Smeets , Edwin Te Sligte , Alexey Kuznetsov
- Applicant: Carl Zeiss SMT GmbH , ASML Netherlands B.V.
- Applicant Address: DE Oberkochen NL Veldhoven
- Assignee: CARL ZEISS SMT GMBH,ASML NETHERLANDS B.V.
- Current Assignee: CARL ZEISS SMT GMBH,ASML NETHERLANDS B.V.
- Current Assignee Address: DE Oberkochen NL Veldhoven
- Agency: Edell, Shapiro & Finnan, LLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7bc33458
- Main IPC: G02B1/14
- IPC: G02B1/14 ; G02B5/08 ; G21K1/06 ; G03F7/20 ; C23C16/56

Abstract:
An optical element (50), comprising: a substrate (52), an EUV radiation reflecting multilayer system (51) applied to the substrate, and a protective layer system (60) applied to the multilayer system and having at least a first and a second layer (57, 58). The first layer (57) is arranged closer to the multilayer system (51) than is the second layer (58) and serves as a diffusion barrier for hydrogen. This first layer (57) has a lower solubility for hydrogen than does the second layer (58), which serves for absorbing hydrogen. Also disclosed are an optical system for EUV lithography with at least one such optical element, and a method for treating an optical element in order to remove hydrogen incorporated in at least one layer (57, 58, 59) of the protective layer system and/or in at least one layer (53, 54) of the multilayer system (51).
Public/Granted literature
- US20160187543A1 OPTICAL ELEMENT AND OPTICAL SYSTEM FOR EUV LITHOGRAPHY, AND METHOD FOR TREATING SUCH AN OPTICAL ELEMENT Public/Granted day:2016-06-30
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