Invention Grant
- Patent Title: Optoelectronics integration using semiconductor on insulator substrate
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Application No.: US16016653Application Date: 2018-06-25
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Publication No.: US10690853B2Publication Date: 2020-06-23
- Inventor: Ning Li , Devendra K. Sadana , Christopher Heidelberger
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Otterstedt, Wallace & Kammer, LLP
- Agent Erik Johnson
- Main IPC: G02B6/136
- IPC: G02B6/136 ; G02B6/13 ; G02B6/12 ; G02B6/124
Abstract:
A III-V optoelectronic light emitting device is epitaxially formed on a semiconductor on insulator substrate over a buried waveguide core. The device is optically coupled to the underlying waveguide core. A MOSFET device is formed on a semiconductor substrate beneath the insulator that contains the waveguide core.
Public/Granted literature
- US20190391328A1 OPTOELECTRONICS INTEGRATION USING SEMICONDUCTOR ON INSULATOR SUBSTRATE Public/Granted day:2019-12-26
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