Methods and systems for providing overlay corrections are provided. A method may include: selecting an overlay model configured to perform overlay modeling for a wafer; obtaining a first set of modeled results from the overlay model, the first set of modeled results indicating adjustments applicable to a plurality of term coefficients of the overlay model; calculating a significance matrix indicating the significance of the plurality of term coefficients; identifying at least one less significant term coefficient among the plurality of term coefficients based on the calculated significance matrix; obtaining a second set of modeled results from the overlay model, the second set of modeled results indicating adjustments applicable to the plurality of term coefficients except for the identified at least one less significant term coefficient; and providing the second set of modeled results to facilitate overlay correction.