Invention Grant
- Patent Title: System and method for a proportional to absolute temperature circuit
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Application No.: US16129308Application Date: 2018-09-12
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Publication No.: US10691155B2Publication Date: 2020-06-23
- Inventor: Stefan Marinca
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: G05F3/20
- IPC: G05F3/20

Abstract:
In accordance with an embodiment, a proportional to absolute temperature (PTAT) circuit includes a first bipolar transistor having a collector coupled to a common node; a second bipolar transistor having a collector coupled to the common node; a MOSFET having a load path coupled between a base of the first bipolar transistor and a base of the second bipolar transistor; and an amplifier having a first input coupled to an emitter of the first bipolar transistor, a second input coupled to an emitter of the second bipolar transistor and an output coupled to a gate of the MOSFET.
Public/Granted literature
- US20200081475A1 SYSTEM AND METHOD FOR A PROPORTIONAL TO ABSOLUTE TEMPERATURE CIRCUIT Public/Granted day:2020-03-12
Information query
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