A flash memory error correction method and apparatus is provided. The method includes determining a first data bit in a flash memory page, where the first data bit corresponds to different data respectively in the data obtained by reading the flash memory page using the (n+1)th read voltage threshold and the data obtained by reading the flash memory page using the mth read voltage threshold; and then reducing a confidence level of the first data bit in the data obtained by reading the flash memory page using the (n+1)th read voltage threshold; and performing, according to an adjusted confidence level of the first data bit, error correction decoding on the data obtained by reading the flash memory page using the (n+1)th read voltage threshold. Present disclosure effectively improves a success rate of error correction decoding, thereby significantly improving performance of an SSD storage system.