Invention Grant
- Patent Title: Directed self-assembly process with size-restricted guiding patterns
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Application No.: US16041892Application Date: 2018-07-23
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Publication No.: US10692725B2Publication Date: 2020-06-23
- Inventor: Ming-Huei Weng , Kuan-Hsin Lo , Wei-Liang Lin , Chi-Cheng Hung
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/02 ; H01L21/3065 ; H01L21/306 ; H01L21/033 ; H01L21/027 ; H01L21/311

Abstract:
A method includes providing a substrate; forming mandrel patterns over the substrate; and forming spacers on sidewalls of the mandrel patterns. The method further includes removing the mandrel patterns, thereby forming trenches that are at least partially surrounded by the spacers. The method further includes depositing a copolymer material in the trenches, wherein the copolymer material is directed self-assembling; and inducing microphase separation within the copolymer material, thereby defining a first constituent polymer surrounded by a second constituent polymer. The mandrel patterns have restricted sizes and a restricted configuration. The first constituent polymer includes cylinders arranged in a rectangular or square array.
Public/Granted literature
- US20180350613A1 Directed Self-Assembly Process with Size-Restricted Guiding Patterns Public/Granted day:2018-12-06
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