Invention Grant
- Patent Title: Methods of patterning nickel silicide layers on a semiconductor device
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Application No.: US16171053Application Date: 2018-10-25
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Publication No.: US10692734B2Publication Date: 2020-06-23
- Inventor: Jong Mun Kim , Chentsau Chris Ying , He Ren , Srinivas D. Nemani , Ellie Yieh
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/3213 ; H01L23/532
Abstract:
Methods and apparatus for processing a substrate and etching a nickel silicide layer are provided herein. In some embodiments, a method of etching a nickel silicide film in a semiconductor device include: contacting a nickel silicide film disposed on a substrate in a process chamber with an etching gas sufficient to form one or more soluble or volatile products in order to reduce or eliminate re-deposition of products formed from the nickel silicide film upon the nickel silicide film.
Public/Granted literature
- US20200135492A1 METHODS OF PATTERNING NICKEL SILICIDE LAYERS ON A SEMICONDUCTOR DEVICE Public/Granted day:2020-04-30
Information query
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