Invention Grant
- Patent Title: Radiation plate structure, semiconductor device, and method for manufacturing radiation plate structure
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Application No.: US15768601Application Date: 2016-01-14
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Publication No.: US10692794B2Publication Date: 2020-06-23
- Inventor: Yukimasa Hayashida , Hiroki Shiota
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2016/050914 WO 20160114
- International Announcement: WO2017/122306 WO 20170720
- Main IPC: H01L23/36
- IPC: H01L23/36 ; H01L23/373 ; H05K1/02 ; H05K1/03 ; H01L23/367

Abstract:
A radiation plate structure includes a radiation plate, and a solder resist disposed on a main surface of the radiation plate and having at least one opening. The solder resist is made of any of polyimide (PI), polyamide (PA), polypropylene (PP), polyphenylene sulfide (PPS), a resin containing particulate ceramic (e.g., aluminum nitride (AlN), silicon nitride (Si3N4), or aluminum oxide (Al2O3)), and a high-melting-point insulator made of, for instance, glass.
Public/Granted literature
- US20180294203A1 RADIATION PLATE STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING RADIATION PLATE STRUCTURE Public/Granted day:2018-10-11
Information query
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