Semiconductor structure and method for manufacturing semiconductor structure
Abstract:
The present invention discloses a semiconductor structure and a method for manufacturing the semiconductor structure. The semiconductor structure includes: a substrate; and at least one composition adjusting layer disposed above the substrate; wherein each of the at least one composition adjusting layer is made of a semiconductor compound, the semiconductor compound at least comprises a first element and a second element, and an atomic number of the first element is less than an atomic number of the second element, wherein in each of the at least one composition adjusting layer, along an epitaxial direction of the substrate, an atomic percentage of the first element in a compound composition is gradually decreased at first and then gradually increased, a thickness of a gradual decrease section is greater than a thickness of a gradual increase section.
Information query
Patent Agency Ranking
0/0