Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing semiconductor structure
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Application No.: US16184998Application Date: 2018-11-08
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Publication No.: US10692819B2Publication Date: 2020-06-23
- Inventor: Peng Xiang , Kai Cheng
- Applicant: ENKRIS SEMICONDUCTOR, INC.
- Applicant Address: CN Suzhou
- Assignee: ENKRIS SEMICONDUCTOR, INC.
- Current Assignee: ENKRIS SEMICONDUCTOR, INC.
- Current Assignee Address: CN Suzhou
- Agency: Flener IP & Business Law
- Agent Zareefa B. Flener
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/161 ; H01L29/20 ; H01L23/00 ; H01L33/12 ; H01L33/32 ; H01L33/34

Abstract:
The present invention discloses a semiconductor structure and a method for manufacturing the semiconductor structure. The semiconductor structure includes: a substrate; and at least one composition adjusting layer disposed above the substrate; wherein each of the at least one composition adjusting layer is made of a semiconductor compound, the semiconductor compound at least comprises a first element and a second element, and an atomic number of the first element is less than an atomic number of the second element, wherein in each of the at least one composition adjusting layer, along an epitaxial direction of the substrate, an atomic percentage of the first element in a compound composition is gradually decreased at first and then gradually increased, a thickness of a gradual decrease section is greater than a thickness of a gradual increase section.
Public/Granted literature
- US20190081010A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE Public/Granted day:2019-03-14
Information query
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