Invention Grant
- Patent Title: High surge bi-directional transient voltage suppressor
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Application No.: US16178071Application Date: 2018-11-01
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Publication No.: US10692851B2Publication Date: 2020-06-23
- Inventor: Shekar Mallikarjunaswamy , Ning Shi
- Applicant: Alpha and Omega Semiconductor (Cayman) Ltd.
- Applicant Address: KY Grand Cayman
- Assignee: ALPHA AND OMEGA SEMICONDUCTOR (CAYMAN) LTD.
- Current Assignee: ALPHA AND OMEGA SEMICONDUCTOR (CAYMAN) LTD.
- Current Assignee Address: KY Grand Cayman
- Agency: Patent Law Works LLP
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L27/02 ; H02H9/04 ; H02H9/00 ; H01L29/08 ; H01L29/10 ; H01L29/06 ; H01L29/40 ; H01L29/732 ; H01L29/861 ; H01L29/36

Abstract:
A transient voltage suppressor (TVS) is constructed as an NPN bipolar transistor including individually optimized collector-base and emitter-base junctions both with avalanche mode breakdown. The TVS device is constructed using a base that includes a lightly doped base region bordered by a pair of more heavily doped base regions. The two more heavily doped base regions are used to form the collector-base junction and the emitter-base junction both as avalanche breakdown junctions. The lightly doped base region between the collector-base and emitter-base doping regions ensures low leakage current in the TVS device. In this manner, the TVS bipolar transistor of the present invention provides high surge protection with robust clamping while ensuring low leakage current.
Public/Granted literature
- US20190074274A1 HIGH SURGE BI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR Public/Granted day:2019-03-07
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