Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
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Application No.: US16567000Application Date: 2019-09-11
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Publication No.: US10692861B2Publication Date: 2020-06-23
- Inventor: Masatoshi Aketa , Yuki Nakano
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agent Gregory M. Howison
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7de7641a com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4bbf2712 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2aa9868c
- Main IPC: H01L27/07
- IPC: H01L27/07 ; H01L29/417 ; H01L23/00 ; H01L29/739 ; H01L25/07 ; H01L29/08 ; H01L29/16 ; H01L25/18 ; H01L29/66 ; H01L21/04 ; H01L23/31 ; H01L23/498 ; H01L25/00 ; H01L29/06 ; H01L29/10 ; H01L29/40 ; H01L29/78 ; H01L29/872 ; H01L21/02 ; H01L21/306 ; H01L21/82 ; H01L29/47 ; H02P27/06
Abstract:
A method for manufacturing a semiconductor device having an SiC-IGBT and an SiC-MOSFET in a single semiconductor chip, including forming a second conductive-type SiC base layer on a substrate, and selectively implanting first and second conductive-type impurities into surfaces of the substrate and base layer to form a collector region, a channel region in a surficial portion of the SiC base layer, and an emitter region in a surficial portion of the channel region, the emitter region serving also as a source region of the SiC-MOSFET.
Public/Granted literature
- US20200006327A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2020-01-02
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