Invention Grant
- Patent Title: Semiconductor device having asymmetric fin-shaped pattern
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Application No.: US16233301Application Date: 2018-12-27
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Publication No.: US10692864B2Publication Date: 2020-06-23
- Inventor: Jung-Gun You , Se-Wan Park , Baik-Min Sung , Bo-Cheol Jeong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1488e266
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/088 ; H01L29/78 ; H01L29/06 ; H01L29/66
Abstract:
Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.
Public/Granted literature
- US20190131300A1 SEMICONDUCTOR DEVICE HAVING ASYMMETRIC FIN-SHAPED PATTERN Public/Granted day:2019-05-02
Information query
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