Invention Grant
- Patent Title: Three-dimensional devices having reduced contact length
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Application No.: US15670864Application Date: 2017-08-07
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Publication No.: US10692870B2Publication Date: 2020-06-23
- Inventor: Toru Tanzawa
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L27/11531 ; H01L27/11556 ; H01L27/11573 ; H01L27/11582 ; H01L27/11578 ; H01L21/74 ; H01L27/02 ; H01L27/11

Abstract:
Various embodiments comprise apparatuses and methods including a memory array having alternating levels of semiconductor materials and dielectric material with strings of memory cells formed on the alternating levels. One such apparatus includes a memory array formed substantially within a cavity of a substrate. Peripheral circuitry can be formed adjacent to a surface of the substrate and adjacent to the memory array. Additional apparatuses and methods are described.
Public/Granted literature
- US20170358580A1 THREE-DIMENSIONAL DEVICES HAVING REDUCED CONTACT LENGTH Public/Granted day:2017-12-14
Information query
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