- Patent Title: Semiconductor memory device and method of manufacturing the same
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Application No.: US15982213Application Date: 2018-05-17
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Publication No.: US10692881B2Publication Date: 2020-06-23
- Inventor: Sung-Min Hwang , Joon-Sung Lim , Jihye Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2dda2c31 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1b8499bb
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L23/538 ; H01L27/11556 ; H01L27/11575 ; H01L27/11573
Abstract:
A semiconductor memory device includes a body conductive layer that includes a cell array portion and a peripheral circuit portion, an electrode structure on the cell array portion of the body conductive layer, vertical structures that penetrate the electrode structure, a residual substrate on the peripheral circuit portion of the body conductive layer, and a connection conductive pattern penetrating the residual substrate. The electrode structure includes a plurality of electrode that are stacked on top of each other. The vertical structures are connected to the cell array portion of the body conductive layer. The connection conductive pattern is connected to the peripheral circuit portion of the body conductive layer.
Public/Granted literature
- US20180358376A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-12-13
Information query
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