Invention Grant
- Patent Title: Self-aligned cross-point phase change memory-switch array
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Application No.: US15414144Application Date: 2017-01-24
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Publication No.: US10692930B2Publication Date: 2020-06-23
- Inventor: Jong Won Lee , Gianpaolo Spadini , Derchang Kau
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00
Abstract:
Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.
Public/Granted literature
- US20170133433A1 SELF-ALIGNED CROSS-POINT PHASE CHANGE MEMORY-SWITCH ARRAY Public/Granted day:2017-05-11
Information query
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