Invention Grant
- Patent Title: Doped aluminum nitride crystals and methods of making them
-
Application No.: US16055228Application Date: 2018-08-06
-
Publication No.: US10692980B2Publication Date: 2020-06-23
- Inventor: Glen A. Slack , Leo J. Schowalter
- Applicant: Glen A. Slack , Leo J. Schowalter
- Applicant Address: US NY Green Island
- Assignee: CRYSTAL IS, INC.
- Current Assignee: CRYSTAL IS, INC.
- Current Assignee Address: US NY Green Island
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: C30B29/38
- IPC: C30B29/38 ; H01L29/207 ; C30B23/00 ; C30B29/40 ; H01L29/20 ; H01L21/02 ; H01L21/225 ; H01L33/32
Abstract:
Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
Public/Granted literature
- US20190035898A1 DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM Public/Granted day:2019-01-31
Information query
IPC分类:
