Invention Grant
- Patent Title: Insulated-gate bipolar transistor structure and method for manufacturing the same
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Application No.: US15571230Application Date: 2016-06-29
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Publication No.: US10692995B2Publication Date: 2020-06-23
- Inventor: Xianda Zhou , Ka Kit Wong , Kin on johnny Sin
- Applicant: Ka Kit Wong
- Applicant Address: HK Clear Water Bay
- Assignee: Ka Kit Wong
- Current Assignee: Ka Kit Wong
- Current Assignee Address: HK Clear Water Bay
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- International Application: PCT/CN2016/087583 WO 20160629
- International Announcement: WO2018/000223 WO 20180104
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/66 ; H01L29/06 ; H01L29/417 ; H01L29/10
Abstract:
The present invention provides an insulated-gate bipolar transistor (IGBT) structure and a method for manufacturing the same. The structure is a planar IGBT structure, and is characterized by an ultra-thin channel and buried oxide located below the channel. The structure can provide the theoretically lowest on-state voltage drop.
Public/Granted literature
- US20180226500A1 INSULATED-GATE BIPOLAR TRANSISTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2018-08-09
Information query
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