Invention Grant
- Patent Title: Bypassed gate transistors having improved stability
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Application No.: US16182642Application Date: 2018-11-07
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Publication No.: US10692998B2Publication Date: 2020-06-23
- Inventor: Khaled Fayed , Simon Wood
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/417 ; H01L29/423 ; H01L23/522 ; H01L23/528 ; H01L29/06 ; H01L29/20 ; H01L29/205
Abstract:
A transistor includes a plurality of gate fingers that extend in a first direction and are spaced apart from each other in a second direction, each of the gate fingers comprising at least spaced-apart and generally collinear first and second gate finger segments that are electrically connected to each other. The first gate finger segments are separated from the second gate finger segments in the first direction by a gap region that extends in the second direction. A resistor is disposed in the gap region.
Public/Granted literature
- US20190088772A1 BYPASSED GATE TRANSISTORS HAVING IMPROVED STABILITY Public/Granted day:2019-03-21
Information query
IPC分类:
