Invention Grant
- Patent Title: Semiconductor device having field-effect structures with different gate materials
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Application No.: US15633974Application Date: 2017-06-27
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Publication No.: US10693000B2Publication Date: 2020-06-23
- Inventor: Walter Rieger
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6437160b
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/423 ; H01L29/78 ; H01L29/66 ; H01L21/8234 ; H01L29/06 ; H01L29/10 ; H01L29/40 ; H01L29/417 ; H01L29/739
Abstract:
A semiconductor device includes a plurality of first field-effect structures each including a polysilicon gate arranged on and in contact with a first gate dielectric, and a plurality of second field-effect structures each including a metal gate arranged on and in contact with a second gate dielectric. The plurality of first field-effect structures and the plurality of second field-effect structures form part of a power semiconductor device.
Public/Granted literature
- US20170301784A1 Semiconductor Device Having Field-Effect Structures with Different Gate Materials Public/Granted day:2017-10-19
Information query
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