Invention Grant
- Patent Title: Thin film transistor array substrate, method of manufacturing the same, and display device including thin film transistor substrate
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Application No.: US15741132Application Date: 2017-07-18
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Publication No.: US10693011B2Publication Date: 2020-06-23
- Inventor: Xingyu Zhou
- Applicant: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Applicant Address: CN Shenzhen
- Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee Address: CN Shenzhen
- Agency: Nelson Mullins Riley & Scarborough LLP
- Agent Kongsik Kim, Esq.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2cc8fde9
- International Application: PCT/CN2017/093424 WO 20170718
- International Announcement: WO2019/000508 WO 20190103
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L21/02
Abstract:
The present disclosure discloses a method of manufacturing a thin film transistor (TFT) array substrate including a step of preparing a patterned active layer on a base substrate, wherein the step includes: sequentially forming an amorphous silicon (a-Si) thin film layer and a boron-doped (B-doped) amorphous silicon germanium (a-SiGe) thin film layer on the base substrate; performing crystallization on the a-Si thin film layer and the B-doped a-SiGe thin film layer using a thermal annealing process to obtain a polycrystalline silicon (poly-Si) thin film layer and a B-doped polycrystalline silicon germanium (poly-SiGe) thin film layer; and forming the patterned active layer by using a photolithography process to etch the poly-Si thin film layer and the B-doped poly-SiGe thin film layer. The present disclosure further discloses a TFT array substrate and a display device including the TFT array substrate.
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