Invention Grant
- Patent Title: Semiconductor laser diode on tiled gallium containing material
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Application No.: US16556081Application Date: 2019-08-29
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Publication No.: US10693279B1Publication Date: 2020-06-23
- Inventor: Melvin McLaurin , Alexander Sztein , Po Shan Hsu , James W. Raring
- Applicant: Soraa Laser Diode, Inc.
- Applicant Address: US CA Goleta
- Assignee: Soraa Laser Diode, Inc.
- Current Assignee: Soraa Laser Diode, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01S5/02 ; H01S5/00 ; H01S5/022 ; H01L33/16 ; H01L23/00 ; H01L33/50 ; H01S5/343 ; H01S5/32 ; H01S5/028 ; H01S5/042 ; H01S5/22
Abstract:
In an example, the present invention provides a gallium and nitrogen containing structure. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates having one or more epitaxially grown layers. The structure has a first handle substrate coupled to each of the substrates. The orientation of a reference crystal direction for each of the substrates are parallel to within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrates.
Information query
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