Invention Grant
- Patent Title: Power amplifying apparatus with wideband linearity
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Application No.: US16146170Application Date: 2018-09-28
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Publication No.: US10693424B2Publication Date: 2020-06-23
- Inventor: Kyu Jin Choi
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5341cca9
- Main IPC: H03F1/07
- IPC: H03F1/07 ; H03F1/30 ; H03F3/21 ; H03F3/195 ; H03F1/32 ; H03F3/213 ; H03F1/52

Abstract:
A power amplifying apparatus includes a first bias circuit configured to generate a first bias current, a first amplification circuit, configured to receive the first bias current, amplify a signal input to the first amplification circuit through a first node, and output a first amplified signal to a second node, a second bias circuit, configured to generate a second bias current which has a magnitude different from a magnitude of the first bias current, and a second amplification circuit, connected in parallel with the first amplification, configured to receive the second bias current, amplify the signal input through the first node, and output a second amplified signal to the second node. The second amplification circuit is configured to output the second amplified signal with a third-harmonic component that has a phase offsetting a third-order intermodulation distortion (IM3) component included in the first amplified signal, based on the second bias current.
Public/Granted literature
- US20190199293A1 POWER AMPLIFYING APPARATUS WITH WIDEBAND LINEARITY Public/Granted day:2019-06-27
Information query
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