Invention Grant
- Patent Title: One-step growth of a dense, photoresponsive silicon film in molten calcium chloride
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Application No.: US15572321Application Date: 2016-05-06
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Publication No.: US10697080B2Publication Date: 2020-06-30
- Inventor: Allen J. Bard , Huayi Yin
- Applicant: The Board of Regents of The University of Texas System
- Applicant Address: US TX Austin
- Assignee: Board of Regents of the University of Texas System
- Current Assignee: Board of Regents of the University of Texas System
- Current Assignee Address: US TX Austin
- Agency: Kowert, Hood, Munyon, Rankin & Goetzel, P.C.
- Agent Mark R. DeLuca
- International Application: PCT/US2016/031237 WO 20160506
- International Announcement: WO2016/179506 WO 20161110
- Main IPC: C25D3/66
- IPC: C25D3/66 ; C25D9/04 ; H01L21/02 ; H01L31/18 ; C25D9/08 ; C25B1/00 ; C25D21/12 ; H01L21/66 ; H01L31/0445 ; H01L31/068
Abstract:
Photoactive silicon films may be formed by electrodeposition from a molten salt electrolyte. In an embodiment, SiO2 is electrochemically reduced in a molten salt bath to deposit silicon on a carbonaceous substrate.
Public/Granted literature
- US20180112323A1 ONE-STEP GROWTH OF A DENSE, PHOTORESPONSIVE SILICON FILM IN MOLTEN CALCIUM CHLORIDE Public/Granted day:2018-04-26
Information query
