Invention Grant
- Patent Title: High resistance virtual anode for electroplating cell
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Application No.: US16205307Application Date: 2018-11-30
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Publication No.: US10697084B2Publication Date: 2020-06-30
- Inventor: Po-Wei Wang , Chun-Lin Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Applicant Address: TW Hsin-chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee Address: TW Hsin-chu
- Agency: Cooper Legal Group, LLC
- Main IPC: C25D17/12
- IPC: C25D17/12 ; C25D7/12 ; C25D17/00
Abstract:
A high resistance virtual anode for an electroplating cell includes a first layer and a second layer. The first layer includes a plurality of first holes through the first layer. The second layer is over the first layer and includes a plurality of second holes through the second layer.
Public/Granted literature
- US20190100854A1 HIGH RESISTANCE VIRTUAL ANODE FOR ELECTROPLATING CELL Public/Granted day:2019-04-04
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