Invention Grant
- Patent Title: Method and circuit for biasing and readout of resistive sensor structure
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Application No.: US15886046Application Date: 2018-02-01
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Publication No.: US10698009B2Publication Date: 2020-06-30
- Inventor: Johan L. Raman , Pieter Rombouts
- Applicant: Melexis Technologies SA
- Applicant Address: CH Bevaix
- Assignee: Melexis Technologies SA
- Current Assignee: Melexis Technologies SA
- Current Assignee Address: CH Bevaix
- Agency: Workman Nydegger
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@48e0510e
- Main IPC: G01R19/25
- IPC: G01R19/25 ; G01R27/02 ; G01D5/14 ; G01R33/07 ; G01D5/244 ; G01R27/14 ; G01R17/10 ; G01R15/20

Abstract:
A method of biasing and reading-out a passive resistive sensor structure having two excitation nodes and two readout nodes, comprises the steps of: a) determining a first state of a first capacitor corresponding to a first amount of charge biasing the sensor structure such that a biasing current flows through said first capacitor during a first time interval determining a second state of the first capacitor corresponding to a second amount of charge integrating or averaging the readout signal during a second time interval related to the first time interval, thereby obtaining an integrated or averaged readout signal determining the sensor readout signal based on the integrated or averaged readout signal and a change in state of the first capacitor.
Public/Granted literature
- US20180224484A1 METHOD AND CIRCUIT FOR BIASING AND READOUT OF RESISTIVE SENSOR STRUCTURE Public/Granted day:2018-08-09
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