Invention Grant
- Patent Title: Semiconductor memory device including a control circuit and at least two memory cell arrays
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Application No.: US16147223Application Date: 2018-09-28
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Publication No.: US10698611B2Publication Date: 2020-06-30
- Inventor: Masanobu Shirakawa , Tokumasa Hara
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@40e05c79
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C7/10 ; G06F12/0875 ; G06F13/16 ; G11C16/10 ; G11C16/26 ; G11C7/24

Abstract:
A memory device includes memory cell array including a first and second plane and first and second caches. A controller is configured to output status information in response to a status read command. The status information indicating the states of the caches. The controller begins a first process in response to a command addressed to the first plane if the status information indicates the first and second caches are in the ready state, and begins a second process on the second plane according to a second command to the second plane if the status information indicates at least the second cache is in the ready state.
Public/Granted literature
- US20190034081A1 SEMICONDUCTOR MEMORY DEVICE INCLUDING A CONTROL CIRCUIT AND AT LEAST TWO MEMORY CELL ARRAYS Public/Granted day:2019-01-31
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