Invention Grant
- Patent Title: DDR SDRAM physical layer interface circuit and DDR SDRAM control device
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Application No.: US16182680Application Date: 2018-11-07
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Publication No.: US10698846B2Publication Date: 2020-06-30
- Inventor: Kuo-Wei Chi , Chun-Chi Yu , Chih-Wei Chang , Gerchih Chou , Shih-Chang Chen
- Applicant: REALTEK SEMICONDUCTOR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Main IPC: G06F13/16
- IPC: G06F13/16 ; G11C7/22 ; G06F3/06

Abstract:
Disclosed is a DDR SDRAM physical layer interface circuit including: a multiphase clock generator generating a plurality of clocks including a reference clock, a first clock, a second clock and a third clock; a frequency dividing circuit generating a PHY clock according to the first clock; a clock output path outputting the reference clock to a storage circuit; a first output circuit outputting a first output signal to the storage circuit according to a first input signal of a memory controller, the first clock and the PHY clock; a second output circuit outputting a second output signal to the storage circuit according to a second input signal of the memory controller, the second clock and the PHY clock; and a third output circuit outputting a third output signal to the storage circuit according to a third input signal of the memory controller, the third clock and the PHY clock.
Public/Granted literature
- US20200142844A1 DDR SDRAM physical layer interface circuit and DDR SDRAM control device Public/Granted day:2020-05-07
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