A computer program product and methods are provided for semiconductor processing. The method includes forming a masking layer on a first region. The method also includes implanting a second region. The method further includes depositing a protective layer over the first region and the second region, with the protective layer being selectively etchable to the masking layer and thicker over the second region. The additional includes removing the protective layer from the first region. The method also includes etching the masking layer exposing a bottom layer. The method further includes removing the protective layer from the second region and the bottom layer from the first region.