- Patent Title: Semiconductor copper metallization structure and related methods
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Application No.: US16214428Application Date: 2018-12-10
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Publication No.: US10700027B2Publication Date: 2020-06-30
- Inventor: Yusheng Lin
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Adam R. Stephenson, Ltd.
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/00 ; H01L21/304 ; H01L21/265 ; H01L21/324 ; H01L21/02

Abstract:
Implementations of semiconductor packages may include: a silicon die including a pad, the pad including aluminum and copper; a passivation layer over at least a portion of the silicon die and a layer of one of a polyimide (PI) a polybenzoxazole (PBO), or a polymer resin coupled to the passivation layer. The package may include a first copper layer coupled over the pad, the first copper layer being about 1 microns to about 20 microns thick; a second copper layer coupled over the first copper layer, the second copper layer may be about 5 microns to about 40 microns thick; where a width of the first copper layer above the pad may be wider than a width of the second copper layer above the pad. The first and second copper layers may be configured to bond with a heavy copper wire or solder with a copper clip.
Public/Granted literature
- US20190109106A1 SEMICONDUCTOR COPPER METALLIZATION STRUCTURE AND RELATED METHODS Public/Granted day:2019-04-11
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