A solid-state imaging device includes a first semiconductor substrate in which first photoelectric conversion layers photoelectrically converting incident light in a first wavelength band are formed, a second semiconductor substrate in which second photoelectric conversion layers photoelectrically converting incident light are formed, a conductive layer disposed between the first semiconductor substrate and the second semiconductor substrate and having conductivity, an insulation film disposed between the second semiconductor substrate and the conductive layer and having an insulation property, in which light passing through the first photoelectric conversion layer, the conductive layer, and the insulation film is incident on the second semiconductor substrate, a predetermined voltage is applied to the conductive layer, and a wavelength of light in a second wavelength band photoelectrically converted by the second photoelectric conversion layer when the predetermined voltage is applied to the conductive layer is longer than when the predetermined voltage is not applied.