Invention Grant
- Patent Title: Semiconductor devices and methods for manufacturing the same
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Application No.: US15877572Application Date: 2018-01-23
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Publication No.: US10700190B2Publication Date: 2020-06-30
- Inventor: Chia-Hao Lee , Manoj Kumar , Chang-Xiang Hung , Chih-Cherng Liao
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/66 ; H01L29/423 ; H01L21/30 ; H01L29/10 ; H01L21/308 ; H01L21/02 ; H01L29/20
Abstract:
A semiconductor device includes a first gallium nitride layer disposed on a semiconductor substrate, and an aluminum gallium nitride layer disposed on the first gallium nitride layer. The semiconductor device also includes an upper recess and a lower recess disposed in the aluminum gallium nitride layer, wherein the upper recess adjoins the lower recess, and the upper recess has a width that is greater than that of the lower recess. The semiconductor device further includes a second gallium nitride layer disposed in the first recess and the second recess, and a gate structure disposed on the second gallium nitride layer. In addition, the semiconductor device includes a source electrode and a drain electrode disposed on the aluminum gallium nitride layer.
Public/Granted literature
- US20190229209A1 SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME Public/Granted day:2019-07-25
Information query
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