Invention Grant
- Patent Title: Semiconductor device and method
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Application No.: US15816259Application Date: 2017-11-17
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Publication No.: US10700197B2Publication Date: 2020-06-30
- Inventor: Chia-Ling Chan , Meng-Yueh Liu , Wei-Ken Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/22 ; H01L29/06 ; H01L21/311 ; H01L21/3115 ; H01L21/225 ; H01L21/8238
Abstract:
In accordance with some embodiments, a method is provided. The method includes: forming a semiconductor fin protruding from a substrate; depositing a spacer layer over the semiconductor fin; after the depositing the spacer layer over the semiconductor fin, implanting a first dopant in the spacer layer and depositing a dopant layer of the first dopant on the spacer layer in alternating repeating steps; removing the dopant layer; and performing a thermal anneal process to drive the first dopant into the semiconductor fin from the spacer layer.
Public/Granted literature
- US20190103491A1 Semiconductor Device and Method Public/Granted day:2019-04-04
Information query
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