Invention Grant
- Patent Title: Method for forming semiconductor structure
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Application No.: US16404275Application Date: 2019-05-06
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Publication No.: US10700205B2Publication Date: 2020-06-30
- Inventor: Chao-Ching Cheng , Chen-Feng Hsu , Yu-Lin Yang , Jung-Piao Chiu , Tzu-Chiang Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/165 ; H01L29/06 ; H01L29/10 ; H01L29/205 ; H01L21/8238 ; H01L21/8258 ; H01L21/762 ; H01L29/739 ; H01L27/092 ; H01L21/84 ; H01L27/12
Abstract:
A method for forming a semiconductor structure includes receiving a substrate including a dielectric structure; forming a first recess in the substrate; forming a dielectric spacer over a sidewall of the first recess; forming a first semiconductor layer to fill the first recess; removing the dielectric structure to form a second recess over the substrate; and forming a second semiconductor layer to fill the second recess. The dielectric spacer is sandwiched between the first semiconductor layer and the second semiconductor layer.
Public/Granted literature
- US20190259877A1 METHOD FOR FORMING SEMICONDUCTOR STRUCTURE Public/Granted day:2019-08-22
Information query
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