Invention Grant
- Patent Title: Semiconductor device integrating backside power grid and related integrated circuit and fabrication method
-
Application No.: US15993149Application Date: 2018-05-30
-
Publication No.: US10700207B2Publication Date: 2020-06-30
- Inventor: Chih-Liang Chen , Lei-Chun Chou , Jack Liu , Kam-Tou Sio , Hui-Ting Yang , Wei-Cheng Lin , Chun-Hung Liou , Jiann-Tyng Tzeng , Chew-Yuen Young
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L23/528 ; H01L27/088 ; H01L23/535 ; H01L21/768 ; H01L21/8234 ; H01L23/48 ; H01L29/417
Abstract:
A semiconductor device includes a substrate, a dielectric region, a plurality of conductive regions, a first conductive rail and a conductive structure. The dielectric region is situated on the substrate. The plurality of conductive regions are situated on the dielectric region. The first conductive rail is situated within the dielectric region, and is electrically connected to a first conductive region of the plurality of conductive regions. The conductive structure is arranged to penetrate through the substrate and formed under the first conductive rail. The conductive structure is electrically connected to the first conductive rail.
Public/Granted literature
Information query
IPC分类:
