Invention Grant
- Patent Title: Semiconductor device and methods of manufacture
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Application No.: US16224062Application Date: 2018-12-18
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Publication No.: US10700208B2Publication Date: 2020-06-30
- Inventor: Che-Cheng Chang , Kai-Yu Cheng , Chih-Han Lin , Sin-Yi Yang , Horng-Huei Tseng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/417 ; H01L21/768 ; H01L29/66
Abstract:
A semiconductor device and method of manufacture are provided. In an embodiment a first contact is formed to a source/drain region and a dielectric layer is formed over the first contact. An opening is formed to expose the first contact, and the opening is lined with a dielectric material. A second contact is formed in electrical contact with the first contact through the dielectric material.
Public/Granted literature
- US20190148553A1 Semiconductor Device and Methods of Manufacture Public/Granted day:2019-05-16
Information query
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