Invention Grant
- Patent Title: Overturned thin film device with self-aligned gate and source/drain (S/D) contacts
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Application No.: US15945937Application Date: 2018-04-05
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Publication No.: US10700214B2Publication Date: 2020-06-30
- Inventor: Lawrence A. Clevenger , Carl J. Radens , Yiheng Xu , John H. Zhang
- Applicant: International Business Machines Corporation , STMicroelectronics, Inc.
- Applicant Address: US NY Armonk US TX Coppell
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.
- Current Assignee Address: US NY Armonk US TX Coppell
- Agency: Cantor Colburn LLP
- Agent Steven Meyers
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L29/24 ; H01L29/49 ; H01L27/146 ; H01L29/423 ; H01L27/12 ; H01L21/8234

Abstract:
Processes and overturned thin film device structures generally include a gate having a concave shape defined by three faces. The processes generally include forming the overturned thin film device structures such that the channel self-aligns to the gate and the source/drain contacts include a self-aligned step height.
Public/Granted literature
- US20180226511A1 STRUCTURE AND PROCESS FOR OVERTURNED THIN FILM DEVICE WITH SELF-ALIGNED GATE AND S/D CONTACTS Public/Granted day:2018-08-09
Information query
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