• Patent Title: Bidirectional bipolar-mode JFET driver circuitry
  • Application No.: US16444828
    Application Date: 2019-06-18
  • Publication No.: US10700216B2
    Publication Date: 2020-06-30
  • Inventor: John Wood
  • Applicant: John Wood
  • Applicant Address: GB Northamptonshire
  • Assignee: John Wood
  • Current Assignee: John Wood
  • Current Assignee Address: GB Northamptonshire
  • Agency: Renner, Otto, Boisselle & Sklar, LLP
  • Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6ef83ff com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5e6eed9c com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@40a86ccc com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@407c203e com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3af6a3b5 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@13ddab7a com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@10106bc1 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@31ccc42d com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3ea832aa com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@40d0c87e
  • Main IPC: H01L29/10
  • IPC: H01L29/10 H01L29/808 H01L29/732 H01L29/739 H03K17/687 H02M7/217 H03K17/567 H03K17/60
Bidirectional bipolar-mode JFET driver circuitry
Abstract:
Rectifiers are used in power systems, but surges are commonly encountered in the power grid, which can damage switches used to drive the active rectifiers. An active rectification system is proposed in which a ‘thyristor’ type path is enabled through a transistor device such that surges bypass the driving switches.
Public/Granted literature
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/02 .按其半导体本体的特征区分的
H01L29/06 ..按其形状区分的;按各半导体区域的形状、相对尺寸或配置区分的
H01L29/10 ...具有连接到1个不通有待整流、放大或切换的电流的电极上去的半导体区域的;并且这样的电极又是包含3个或更多个电极的半导体器件的组成部分的
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