Invention Grant
- Patent Title: Piezoelectric ceramic sputtering target, lead-free piezoelectric thin film and piezoelectric thin film element using the same
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Application No.: US15470314Application Date: 2017-03-27
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Publication No.: US10700260B2Publication Date: 2020-06-30
- Inventor: Tomohisa Azuma , Masaru Nanao , Kenta Ishii
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@70924b5e
- Main IPC: H01L41/187
- IPC: H01L41/187 ; B32B5/00 ; C04B35/64 ; H01L41/18 ; C23C14/34 ; C23C14/16 ; H01L41/316 ; C23C14/08 ; H01L41/047 ; H01L41/08
Abstract:
A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least Nb (niobium), the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains; and the average particle diameter of the crystal grains is larger than 3 μm and not larger than 30 μm.
Public/Granted literature
Information query
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