Invention Grant
- Patent Title: Post treatment to reduce shunting devices for physical etching process
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Application No.: US16416984Application Date: 2019-05-20
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Publication No.: US10700269B2Publication Date: 2020-06-30
- Inventor: Yu-Jen Wang , Dongna Shen , Vignesh Sundar , Sahil Patel
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L21/311 ; H01L21/3105 ; H01L21/033 ; H01L23/62
Abstract:
A method for etching a magnetic tunneling junction (MTJ) structure is described. A stack of MTJ layers is provided on a bottom electrode. A top electrode is provided on the MTJ stack. The top electrode is patterned. Thereafter, the MTJ stack not covered by the patterned top electrode is oxidized or nitridized. Then, the MTJ stack is patterned to form a MTJ device wherein any sidewall re-deposition formed on sidewalls of the MTJ device is non-conductive and wherein some of the dielectric layer remains on horizontal surfaces of the bottom electrode.
Public/Granted literature
- US20190280197A1 Post Treatment to Reduce Shunting Devices for Physical Etching Process Public/Granted day:2019-09-12
Information query
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