Invention Grant
- Patent Title: Semiconductor memory device having a phase change material
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Application No.: US16117718Application Date: 2018-08-30
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Publication No.: US10700272B2Publication Date: 2020-06-30
- Inventor: Kazuhiro Katono , Takeshi Ishizaki , Atsuko Sakata
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@f1aefa6
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
According to one embodiment, the semiconductor memory device includes a first electrode, a first material layer, including a first material, located on the first electrode, a second material, surrounded by the first material of the first material layer, including a phase change material, and a second electrode provided on the first material.
Public/Granted literature
- US20190267543A1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHODS THEREOF Public/Granted day:2019-08-29
Information query
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