The present disclosure discloses a resistive random access memory (RRAM) and a method for manufacture the RRAM. The method includes: providing a bottom interconnection layer; forming a bottom dielectric layer above the bottom interconnection layer, the bottom dielectric layer comprising a via through the bottom dielectric layer that exposes a portion of the bottom interconnection layer; and forming a bottom electrode layer in the via, the bottom electrode layer including a first electrode selectively grown above the bottom interconnection layer. The bottom electrode layer manufactured in such a way provides improved filling capability of the bottom electrode layer in the via.