Invention Grant
- Patent Title: Silicon carbide substrate and method for manufacturing the same
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Application No.: US16106101Application Date: 2018-08-21
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Publication No.: US10704163B2Publication Date: 2020-07-07
- Inventor: Kyoko Okita
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka-shi, Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka-shi, Osaka
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@e15b8e5
- Main IPC: B32B3/02
- IPC: B32B3/02 ; C30B33/10 ; C30B29/36 ; H01L21/02 ; C30B33/00 ; B24B37/04 ; H01L21/04 ; H01L21/306 ; H01L21/67 ; H01L29/16 ; H01L21/304
Abstract:
A method for manufacturing a silicon carbide substrate includes steps of preparing a silicon carbide substrate having a main surface, polishing the main surface of the silicon carbide substrate using a polishing agent containing a metal catalyst, and cleaning the silicon carbide substrate after the step of polishing. The step of cleaning includes a step of cleaning the silicon carbide substrate with aqua regia.
Public/Granted literature
- US20180355513A1 SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2018-12-13
Information query
