Invention Grant
- Patent Title: Pressure sensor
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Application No.: US16066565Application Date: 2016-12-15
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Publication No.: US10704976B2Publication Date: 2020-07-07
- Inventor: Yuki Seto , Masayuki Yoneda , Yoshiyuki Ishikura , Tomohisa Tokuda , Rina Ogasawara
- Applicant: AZBIL CORPORATION
- Applicant Address: JP Chiyoda-ku
- Assignee: AZBIL CORPORATION
- Current Assignee: AZBIL CORPORATION
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4945d9b3
- International Application: PCT/JP2016/087346 WO 20161215
- International Announcement: WO2017/115660 WO 20170706
- Main IPC: G01L9/00
- IPC: G01L9/00 ; G01L7/08 ; G01L1/22

Abstract:
A pressure sensor according to the present invention includes a diaphragm (3) including a first principal surface (3A) and a second principal surface (3B) that is opposite thereto, the first principal surface receiving a pressure of a fluid; a semiconductor chip (1) provided with resistors that constitute a strain gauge; and at least three support members (2a, 2b, 2c) made of an insulating material, each support member being fixed to the second principal surface at one end thereof and to the semiconductor chip at the other end thereof and extending perpendicularly to the second principal surface so as to support the semiconductor chip. One of the support members (2a) is provided at a center (30) of the diaphragm in plan view. At least two of the other support members (2b, 2c) are provided at positions point-symmetrical about the center of the diaphragm in plan view in a region in which the diaphragm is deformed when a pressure greater than a pressure applied to the second principal surface is applied to the first principal surface.
Public/Granted literature
- US20190003910A1 PRESSURE SENSOR Public/Granted day:2019-01-03
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